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 BZX55C...
Vishay Telefunken
Silicon Epitaxial Planar Z-Diodes
Features
D D D D D
Very sharp reverse characteristic Low reverse current level Very high stability Low noise Available with tighter tolerances
Applications
Voltage stabilization
94 9367
Absolute Maximum Ratings
Tj = 25_C Parameter Power dissipation Z-current Junction temperature Storage temperature range Test Conditions l=4mm, TL=25C Type Symbol PV IZ Tj Tstg Value 500 PV/VZ 175 -65...+175 Unit mW mA C C
Maximum Thermal Resistance
Tj = 25_C Parameter Junction ambient Test Conditions l=4mm, TL=constant Symbol RthJA Value 300 Unit K/W
Electrical Characteristics
Tj = 25_C Parameter Forward voltage Test Conditions IF=200mA Type Symbol VF Min Typ Max 1.5 Unit V
Document Number 85605 Rev. 4, 01-Apr-99
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BZX55C...
Vishay Telefunken
Type BZX55C... 2V4 2V7 3V0 3V3 3V6 3V9 4V3 4V7 5V1 5V6 6V2 6V8 7V5 8V2 9V1 10 11 12 13 15 16 18 20 22 24 27 30 33 36 39 43 47 51 56 62 68 75 VZnom V 2.4 2.7 3.0 3.3 3.6 3.9 4.3 4.7 5.1 5.6 6.2 6.8 7.5 8.2 9.1 10 11 12 13 15 16 18 20 22 24 27 30 33 36 39 43 47 51 56 62 68 75 IZT mA 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 for VZT and rzjT V 1) W 2.28 to 2.56 < 85 2.5 to 2.9 < 85 2.8 to 3.2 < 85 3.1 to 3.5 < 85 3.4 to 3.8 < 85 3.7 to 4.1 < 85 4.0 to 4.6 < 75 4.4 to 5.0 < 60 4.8 to 5.4 < 35 5.2 to 6.0 <25 5.8 to 6.6 < 10 6.4 to 7.2 <8 7.0 to 7.9 <7 7.7 to 8.7 <7 8.5 to 9.6 < 10 9.4 to 10.6 < 15 10.4 to 11.6 < 20 11.4 to 12.7 < 20 12.4 to 14.1 < 26 13.8 to 15.6 < 30 15.3 to 17.1 < 40 16.8 to 19.1 < 50 18.8 to 21.2 < 55 20.8 to 23.3 < 55 22.8 to 25.6 < 80 25.1 to 28.9 < 80 28 to 32 < 80 31 to 35 < 80 34 to 38 < 80 37 to 41 < 90 40 to 46 < 90 44 to 50 < 110 48 to 54 < 125 52 to 60 < 135 58 to 66 < 150 64 to 72 < 200 70 to 79 < 250 rzjk at IZK W mA < 600 1 < 600 1 < 600 1 < 600 1 < 600 1 < 600 1 < 600 1 < 600 1 < 550 1 < 450 1 < 200 1 < 150 1 < 50 1 < 50 1 < 50 1 < 70 1 < 70 1 < 90 1 < 110 1 < 110 1 < 170 1 < 170 1 < 220 1 < 220 1 < 220 1 < 220 1 < 220 1 < 220 1 < 220 1 < 500 0.5 < 600 0.5 < 700 0.5 < 700 0.5 < 1000 0.5 < 1000 0.5 < 1000 0.5 < 1500 0.5 IR and IR at VR V 1 1 1 1 1 1 1 1 1 1 2 3 5 6.2 6.8 7.5 8.2 9.1 10 11 12 13 15 16 18 20 22 24 27 30 33 36 39 43 47 51 56 TKVZ %/K -0.09 to -0.06 -0.09 to -0.06 -0.08 to -0.05 -0.08 to -0.05 -0.08 to -0.05 -0.08 to -0.05 -0.06 to -0.03 -0.05 to +0.02 -0.02 to +0.02 -0.05 to +0.05 0.03 to 0.06 0.03 to 0.07 0.03 to 0.07 0.03 to 0.08 0.03 to 0.09 0.03 to 0.1 0.03 to 0.11 0.03 to 0.11 0.03 to 0.11 0.03 to 0.11 0.03 to 0.11 0.03 to 0.11 0.03 to 0.11 0.04 to 0.12 0.04 to 0.12 0.04 to 0.12 0.04 to 0.12 0.04 to 0.12 0.04 to 0.12 0.04 to 0.12 0.04 to 0.12 0.04 to 0.12 0.04 to 0.12 0.04 to 0.12 0.04 to 0.12 0.04 to 0.12 0.04 to 0.12
mA
mA 2)
< 50 < 10 <4 <2 <2 <2 <1 < 0.5 < 0.1 < 0.1 < 0.1 < 0.1 < 0.1 < 0.1 < 0.1 < 0.1 < 0.1 < 0.1 < 0.1 < 0.1 < 0.1 < 0.1 < 0.1 < 0.1 < 0.1 < 0.1 < 0.1 < 0.1 < 0.1 < 0.1 < 0.1 < 0.1 < 0.1 < 0.1 < 0.1 < 0.1 < 0.1
< 100 < 50 < 40 < 40 < 40 < 40 < 20 < 10 <2 <2 <2 <2 <2 <2 <2 <2 <2 <2 <2 <2 <2 <2 <2 <2 <2 <2 <2 <2 <2 <5 <5 <5 < 10 < 10 < 10 < 10 < 10
1) Tighter tolerances available on request: BZX55A... 1% of VZnom BZX55B... 2% of VZnom BZX55F... 3% of VZnom 2)
at Tj= 150C
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Document Number 85605 Rev. 4, 01-Apr-99
BZX55C...
Vishay Telefunken Characteristics (Tj = 25_C unless otherwise specified)
R thJA - Therm. Resist. Junction / Ambient ( K/W ) 500 VZtn - Relative Voltage Change 1.3 VZtn=VZt/VZ(25C) 1.2
TKVZ=10 10-4/K 8 6 10-4/K 10-4/K 10-4/K 10-4/K
400
300 l 200 100 TL=constant 0 0 5 10 15 20 l - Lead Length ( mm ) l
1.1
4 2
1.0 0.9 0.8 -60
0 -2 10-4/K -4 10-4/K
0
60
120
180
240
95 9611
95 9599
Tj - Junction Temperature ( C )
Figure 1. Thermal Resistance vs. Lead Length
600 Ptot - Total Power Dissipation ( mW ) 500 400 300 200 100 0 0
95 9602
Figure 4. Typical Change of Working Voltage vs. Junction Temperature
TK VZ - Temperature Coefficient of VZ ( 10 -4 /K ) 15
10
5 IZ=5mA 0
40
80
120
160
200
Tamb - Ambient Temperature ( C )
-5 0 10 20 30 40 50 VZ - Z-Voltage ( V )
Figure 2. Total Power Dissipation vs. Ambient Temperature
1000
95 9600
Figure 5. Temperature Coefficient of Vz vs. Z-Voltage
200
- Voltage Change ( mV )
Tj = 25C 100
C D - Diode Capacitance ( pF )
150 VR = 2V 100 Tj = 25C
IZ=5mA 10
DVZ
50
1 0
95 9598
5
10
15
20
25
95 9601
0 0 5 10 15 20 25 VZ - Z-Voltage ( V )
VZ - Z-Voltage ( V )
Figure 3. Typical Change of Working Voltage under Operating Conditions at Tamb=25C
Figure 6. Diode Capacitance vs. Z-Voltage
Document Number 85605 Rev. 4, 01-Apr-99
www.vishay.de * FaxBack +1-408-970-5600 3 (6)
BZX55C...
Vishay Telefunken
100 IF - Forward Current ( mA ) 50 Ptot=500mW Tamb=25C
Tj = 25C 1
IZ - Z-Current ( mA ) 1.0
95 9607
10
40
30
0.1 0.01 0.001 0 0.2 0.4 0.6 0.8
20 10 0 15 20 25 30 35
95 9605
VF - Forward Voltage ( V )
VZ - Z-Voltage ( V )
Figure 7. Forward Current vs. Forward Voltage
100 r Z - Differential Z-Resistance ( W ) 1000
Figure 9. Z-Current vs. Z-Voltage
IZ - Z-Current ( mA )
80 Ptot=500mW Tamb=25C 60
IZ=1mA 100
5mA 10 10mA
40 20 0 0 4 8 12 16 20
1 0
95 9606
Tj = 25C 5 10 15 20 25
95 9604
VZ - Z-Voltage ( V )
VZ - Z-Voltage ( V )
Figure 8. Z-Current vs. Z-Voltage
Z thp - Thermal Resistance for Pulse Cond. (K/W) 1000
Figure 10. Differential Z-Resistance vs. Z-Voltage
tp/T=0.5 100 tp/T=0.2 Single Pulse 10 tp/T=0.1 tp/T=0.05 1 10-1 tp/T=0.02 iZM=(-VZ+(VZ2+4rzj tp/T=0.01
DT=Tjmax-Tamb
RthJA=300K/W
DT/Zthp)1/2)/(2rzj)
100
101 tp - Pulse Length ( ms )
102
95 9603
Figure 11. Thermal Response
www.vishay.de * FaxBack +1-408-970-5600 4 (6)
Document Number 85605 Rev. 4, 01-Apr-99
BZX55C...
Vishay Telefunken Dimensions in mm
Cathode Identification 0.55 max.
technical drawings according to DIN specifications 94 9366
1.7 max.
Standard Glass Case 54 A 2 DIN 41880 JEDEC DO 35 Weight max. 0.3 g
26 min.
3.9 max.
26 min.
Document Number 85605 Rev. 4, 01-Apr-99
www.vishay.de * FaxBack +1-408-970-5600 5 (6)
BZX55C...
Vishay Telefunken Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs ). The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA ) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423
www.vishay.de * FaxBack +1-408-970-5600 6 (6)
Document Number 85605 Rev. 4, 01-Apr-99


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